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2N100 IXTA2N100 IXTP2N100 125OC - Datasheet Archive

MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS(on) = 7 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings

High Voltage MOSFET IXTA 2N100 2N100 IXTP 2N100 2N100 VDSS = 1000 V ID25 =2A RDS(on) = 7 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M 1000 TO-220AB (IXTP) V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 2 A IDM T C = 25°C, pulse width limited by TJM 8 A PD T C = 25°C 100 W -55 . +150 150 °C T stg -55 . +150 TO-263 AA (IXTA) °C TJM D (TAB) GD S °C TJ Md Mounting torque G S D (TAB) 1.13/10 Nm/lb.in. Weight 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s g °C 300 G = Gate, S = Source, D = Drain, TAB = Drain Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 1000 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 µs, duty cycle d 2 % International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times TJ = 25°C TJ = 125°C 4.5 V Applications ±100 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V nA 200 1 µA mA Switch-mode and resonant-mode power supplies Flyback inverters DC choppers 7.0 Advantages Space savings High power density 97540A(5/98) 1-4 IXTA2N100 IXTA2N100 IXTP2N100 IXTP2N100 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C oss C rss t d(on) S pF 58 pF 15 VGS = 0 V, VDS = 25 V, f = 1 MHz 2.2 825 C iss 1.5 TO-220 AB Outline pF 15 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 15 35 ns td(off) RG = 20 , (External) 60 80 ns 30 55 ns 40 nC 10 nC 15 nC tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC 1.25 R thCK K/W 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 2 A ISM Repetitive; pulse width limited by TJM 8 IF = IS, VGS = 0 V, Pulse test, t 300 µs, duty cycle d 2 % 1.5 IF = IS, -di/dt = 100 A/µs, VR = 100 V A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 V t rr Dim. 1 - Gate 3 - Emitter Bottom Side A VSD Pins: 2 - Collector 4 - Collector 1000 TO-263 SMD Outline ns 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Dim. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R © 2000 IXYS All rights reserved Millimeter Min. Max. 0.46 0.74 .018 .029 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTA2N100 IXTA2N100 IXTP2N100 IXTP2N100 4 TJ=125OC 125OC VGS=10V 9V 8V 7V 6V 6V ID - Amperes 3 ID - Amperes 3 VGS=10V 9V 8V 7V TJ=25OC 2 2 1 1 5V 5V 0 0 0 5 10 15 20 25 0 30 5 15 20 25 30 VDS - Volts VDS - Volts Figure 2. Output Characteristics at 125OC 125OC O Figure 1. Output Characteristics at 25 C 3.5 4 VGS=10V VGS = 10V TJ = 125OC 125OC 3.0 RDS(ON) - Normalized RDS(ON) - Normalized 10 2.5 2.0 TJ = 25OC 1.5 1.0 0.5 0 1 2 3 3 ID= 2 A 2 ID= 1 A 1 0 25 4 50 ID - Amperes 75 100 125 150 TJ - Degrees C Figure 3. RDS(on) normalized to 0.5 ID25 value Figure 4. RDS(on) normalized to 0.5 ID25 value 2.5 2.0 2.0 ID - Amperes ID - Amperes 1.5 1.5 1.0 TJ = 25oC 1.0 0.5 0.5 0.0 -50 TJ = 125oC -25 0 25 50 75 100 125 150 T - Degrees C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved 0.0 0 2 4 V 6 8 10 Volts Figure 6. Admittance Curves 3-4 IXTA2N100 IXTA2N100 IXTP2N100 IXTP2N100 12 10000 f = 1MHz Capacitance - pF Vds= 500V ID= 1A IG= 1mA 10 VGS - Volts 8 6 4 Ciss 1000 Coss 100 Crss 10 2 0 0 10 20 30 1 40 0 10 20 Gate Charge - nC 30 40 VDS - Volts Figure 8. Capacitance Curves Figure 7. Gate Charge 1 00 5 TC = 25OC 10 ID - Amperes ID - Amperes 4 3 TJ = 125OC 125OC 2 TJ = 25OC 2 1 1 ms 10 ms 100 ms DC 0. 1 1 0. 01 0 0.2 0.4 0.6 0.8 1.0 1.2 1 VSD - Volts 1 00 1 000 VDS - Volts Figure 9. Source Current vs. Source to Drain Voltage 1 10 Figure10. Forward Bias Safe Operating Area D=0.5 D=0.2 ZthJC (K/W) D=0.1 0.1 D=0.05 D=0.02 D=0.01 D = Duty Cycle 0.01 0.001 0.00001 Single pulse 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4